AND BRAISING ALLOY PREFORMS; DIE ATTACH PREFORMS; LIDS AND LID SEAL PREFORMS; SOFT SOLDER PREFORMS; HEAT SINKS; BONDING WIRES; BONDING RIBBONS; VACUUM DEPOSITS;EVAPORATION SUPERCHARGES; EVAPORATION WIRES; SPUTTERING TARGETS; DOPING PREFORMS; COMPOUND SEMICONDUCTORS OF CADMIUM MERCURY TELLURIDE N OR P TYPE SINGLE CRYSTAL WAFERS, CADMIUM TELLURIDE SINGLE CRYSTAL WAFERS AND BARS, GALLIUM ANTIMONIDE SINGLE CRYSTAL WAFERS AND POLYCRYSTALLINESLICES AND INGOTS, GALLIUM ARSENIDE SEMI-INSULATING SINGLE CRYSTAL WAFERS, INDIUM ANTIMONIDE N OR P TYPE, SINGLE CRYSTALWAFERS AND INDIUM ARSENIDE N TYPE, AND SINGLE CRYSTAL WAFERS.

'alloy':3 'antimonid':53,70 'arsenid':62,79 'attach':6 'bar':51 'bond':18,20 'brais':2 'cadmium':35,45 'compound':32 'crystal':43,48,55,67,84 'crystalwaf':76 'deposit':23 'die':5 'dope':30 'evapor':24,26 'gallium':52,61 'heat':16 'indium':69,78 'ingot':60 'insul':65 'lid':8,10 'mercuri':36 'n':38,71,80 'p':40,73 'polycrystallineslic':58 'preform':4,7,12,15,31 'ribbon':21 'seal':11 'semi':64 'semi-insul':63 'semiconductor':33 'singl':42,47,54,66,75,83 'sink':17 'soft':13 'solder':14 'sputter':28 'supercharg':25 'target':29 'tellurid':37,46 'type':41,74,81 'vacuum':22 'wafer':44,49,56,68,85 'wire':19,27

HIGH PURITY ELECTRONIC METALS, METAL ALLOYS AND INTERMETALLICS.

'alloy':6 'electron':3 'high':1 'intermetal':8 'metal':4,5 'puriti':2

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