Instruments for measuring the curvature of a substrate on which a thin film is deposited or on which a vacuum treatment is carried out by a physical or chemical process, the substrate in question being a wafer of a metallic or semiconductor element, these instruments being used for in situ monitoring of the growth of the thin film in real time

'carri':23 'chemic':29 'curvatur':5 'deposit':15 'element':43 'film':13,58 'growth':54 'instrument':1,45 'measur':3 'metal':40 'monitor':51 'physic':27 'process':30 'question':34 'real':60 'semiconductor':42 'situ':50 'substrat':8,32 'thin':12,57 'time':61 'treatment':21 'use':47 'vacuum':20 'wafer':37

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