semiconductor manufacturing and substrate processing equipment, namely, equipment for physical vapor deposition (PVD), chemical vapor deposition (CVD), laser annealing and scribing,vacuum heating process, plasma etch, and sputter etch, comprised of primary components including a processing chamber and a substrate holder, and also containing a source for providing target material, vacuum pump, transport mechahism, and control electronics, and vacuum processing equipment, namely, equipment for physical vapor deposition (PVD), chemical vapor deposition (CVD), laser annealing and scribing, vacuum heating process, plasma etch, and sputter etch, comprised of primary components including a processing chamber and a substrate holder, and also containing a source for providing target material, vacuum pump, transport mechanism, and control electronics

'also':43,98 'anneal':19,74 'chamber':37,92 'chemic':14,69 'compon':33,88 'compris':30,85 'contain':44,99 'control':56,111 'cvd':17,72 'deposit':12,16,67,71 'electron':57,112 'equip':6,8,61,63 'etch':26,29,81,84 'heat':23,78 'holder':41,96 'includ':34,89 'laser':18,73 'manufactur':2 'materi':50,105 'mechah':54 'mechan':109 'name':7,62 'physic':10,65 'plasma':25,80 'primari':32,87 'process':5,24,36,60,79,91 'provid':48,103 'pump':52,107 'pvd':13,68 'scribe':21,76 'semiconductor':1 'sourc':46,101 'sputter':28,83 'substrat':4,40,95 'target':49,104 'transport':53,108 'vacuum':22,51,59,77,106 'vapor':11,15,66,70

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