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Microwave and radio frequency devices, namely, amplifiers, namely, low noise amplifier (LNAs), electronic switches, radio frequency power transistors and diodes, namely, Schottky, metaloxide semiconductor field effect transistors (MOSFET) metal semiconductor field effect transistors (MESFET) pintrinsic-n field effect transistors (PINFET) lateral diffused metal oxide semiconductors (LDMOS) herterojunction bipolar transistors, pseudomorphic high electron mobility transistor (pHEMT) laser diodes, ferrites, namely, ferromagnetic materials, surface mounts, varactors, attenuators, frequency synthesizer circuits, namely, voltage controlled oscillators (VCOs), electronic combiners, radio frequency signal mixers, delay lines, namely, transmission delay lines, passivation materials, splitters, sensors, electronic integrated circuits, namely, hybrid microwave integrated circuit (HMIC), monolithic microwave integrated circuit (MXIC), and fabrication materials, namely, aluminum qallium arsenide (AIGaAS) gallium arsenide (GaAs), silicon (Si) silcon quermanium, (SiGe) and indium qallium phosphide (InGaP)